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High power, high AlGaN/GaN-HEMTs with novel powerbar design

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4 Author(s)
Lossy, Richard ; Ferdinand-Braun-Inst. fiir Hochstfrequenztechnik, Berlin ; Liero, A. ; Wurfl, Joachim ; Trankle, G.

Gallium nitride transistors for high power microwave application are often limited by power loss due to extended transistor finger size. A new design for the gate supply is presented which allows for higher power gain compared to conventional transistor designs. Using this technique a linear gain of 20 dB is measured for a packaged power device delivering 28 Watt at 2GHz

Published in:

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Date of Conference:

5-5 Dec. 2005