Referenced Items are not available for this document.
Gallium nitride transistors for high power microwave application are often limited by power loss due to extended transistor finger size. A new design for the gate supply is presented which allows for higher power gain compared to conventional transistor designs. Using this technique a linear gain of 20 dB is measured for a packaged power device delivering 28 Watt at 2GHz
Published in:
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Date of Conference: 5-5 Dec. 2005
- Page(s):
- 580 - 582
- Print ISBN:
- 0-7803-9268-X
- INSPEC Accession Number:
- 9071847
- Conference Location :
- Washington, DC
- Digital Object Identifier :
- 10.1109/IEDM.2005.1609413
- Product Type:
- Conference Publications
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