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High performance 30 nm gate bulk CMOS for 45 nm node with /spl Sigma/-shaped SiGe-SD

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18 Author(s)

Aggressively scaled 30 nm gate CMOSFETs for 45 nm node is reported. We successfully improved the short channel effect with keeping a high drive current by Sigma shaped SiGe-source/drain (SiGe-SD) structure. Both hole mobility and source/drain extension (SDE) resistance in pMOSFET are improved by combination of optimized Sigma shaped SiGe-SD and slit-embedded B-doped SiGe-SDE. Electron and hole mobility enhancement can be balanced by aggressively scaled poly-Si pMOS gate height and SiN capped shallow trench isolation (STI) with SiN liner. A high performance 30 nm/33 nm gate nMOSFET and pMOSFET were demonstrated with a drive currents of 937/1000 muA/mum and 490/545 muA/mum at Vd=1.0 V / Ioff=100 nA/mum, respectively

Published in:

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

Date of Conference:

5-5 Dec. 2005