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High performance cmos bulk technology using direct silicon bond (dsb) mixed crystal orientation substrates

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24 Author(s)
Chun-Yung Sung ; Res. Div., T.J. Watson Res. Center, Yorktown Heights, NY ; Haizhou Yin ; Ng, H.Y. ; Saenger, K.L.
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High performance 65-nm technology (Lpoly=45nm, EOT=1.2nm) bulk CMOS has been demonstrated for the first time on mixed orientation substrates formed by using direct silicon bonded (DSB) wafers and a solid phase epitaxy (SPE) process. The pFET performance is improved by 35% due to hole mobility enhancement on (110) surfaces as compared to (100) surfaces. nFETs on SPE-converted (100) surfaces exhibit the same performance as those on (100) controls. Ring oscillators fabricated using DSB with SPE show improvements of more than 20% compared with control CMOS on (100) surfaces

Published in:

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Date of Conference:

5-5 Dec. 2005