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45-nm node NiSi FUSI on nitrided oxide bulk CMOS fabricated by a novel integration process

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25 Author(s)
Yu, S. ; Silicon Technol. Dev., Texas Instrum. Inc., Dallas, TX ; Lu, J.-P. ; Mehrad, F. ; Bu, H.
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Bulk CMOS transistors with NiSi fully silicided gate electrodes (FUSI) on plasma nitrided oxide gate dielectric are fabricated by a novel integration method using CoSi2 as Ni barrier layer on active regions. Performance improvements of 15% (NMOS) and 31% (PMOS) are demonstrated over poly gate electrode transistors at 35 nm gate length. FUSI impact on gate leakage, inversion oxide thickness, VT variation, and gate oxide reliability are compared to poly gate devices. Dopant modulation of NiSi FUSI gate electrode work-function are studied

Published in:

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Date of Conference:

5-5 Dec. 2005