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Physics-based noise modelling of semiconductor devices in largesignal operation including low-frequency noise conversion effects

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5 Author(s)
Ghione, G. ; Dipt. di Elettronica, Politecnico di Torino ; Bonani, F. ; Donati, S. ; Bertazzi, F.
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A review is provided on state-of-the-art techniques for the physics-based numerical simulation of noise in semiconductor devices, with particular attention to large-signal forced operation and to the related noise frequency conversion. Open problems associated to the modeling of 1/f-like noise in large-signal operation through a superposition of GR noise sources are discussed with the help of simulation examples. Finally, a 2D physics-based noise analysis of a FET active mixer is presented

Published in:

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Date of Conference:

5-5 Dec. 2005