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Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals

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7 Author(s)
S. K. Samanta ; Dept. of Electr. & Comput. Eng., National Univ. of Singapore ; P. K. Singh ; Won Jong Yoo ; G. Samudra
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This paper for the first time, reports the memory enhancement characteristics and good retention with feasibility of two-bit operation of small scale devices with gate length down to 100 nm, using double layer W nanocrystals embedded in HfAlO for the next generation memory application. Double layer device shows increasing memory window with scaling which will be extremely beneficial

Published in:

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

Date of Conference:

5-5 Dec. 2005