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High density silicon nanocrystal embedded in sin prepared by low energy (<500eV) SiH/sub 4/ plasma immersion ion implantation for non-volatile memory applications

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8 Author(s)
Sangmoo Choi ; Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol. ; Hyejung Choi ; Tae-Wook Kim ; Hyundeok Yang
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We report on the excellent memory properties of silicon nanocrystals (Si-NCs) embedded in SiN. Si-NCs were formed by SiH4 low-energy plasma immersion ion implantation. Compared with control Si+-implanted sample, additional hydrogen enhanced Si-NC density. By incorporating Si-NCs in SiN, improved program/erase efficiency, endurance and retention characteristics were observed due to the generation of additional accessible deep charge traps. Using conductive atomic force microscopy and MIS device with gate area of 100 nm, charge trapping/detrapping and multi-level charge storage of single Si-NC at room temperature were observed

Published in:

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

Date of Conference:

5-5 Dec. 2005