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High performance k=2.5 ULK backend solution using an improved TFHM architecture, extendible to the 45nm technology node

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31 Author(s)
Fox, R. ; Freescale Semicond., Crolles ; Hinsinger, O. ; Richard, E. ; Sabouret, E.
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An enhanced trench first hard mask (TFHM) backend integration architecture has been developed to facilitate straightforward ultra low-k (ULK) material insertion and to enable rapid yield learning at the 65nm technology node. Parametric, yield, reliability, and RC performance data are presented for the fully-integrated, improved TFHM 300mm ULK backend

Published in:

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Date of Conference:

5-5 Dec. 2005

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