By Topic

Dependence of pmos metal work functions on surface conditions of high-k gate dielectrics

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
R. Jha ; Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC ; Bongmook Lee ; Bei Chen ; S. Novak
more authors

The effective work function of PMOS metal gate electrode as a function of intentionally altered HfO2 surfaces was investigated. The impact of capping layers, diffusion barriers and interfacial layers on the final work function was also examined. The factors responsible for the change in the effective work function after subsequent thermal treatments were identified and routes to maintain the high effective work function have been demonstrated

Published in:

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

Date of Conference:

5-5 Dec. 2005