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Universal theory of workfunctions at metal/Hf-based high-k dielectrics interfaces - guiding principles for gate metal selection

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16 Author(s)

We have constructed a universal theory of workfunctions at metal/Hf-based dielectrics interfaces by combining an oxygen vacancy effects and a new concept of generalized charge neutrality level. Our theory systematically reproduces the experimentally observed workfunctions of various gate materials, including the unusual behaviors of workfunctions of both p-metals and metal silicides, and will become a useful guiding principle for the material selection of gate metals

Published in:

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Date of Conference:

5-5 Dec. 2005

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