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High performance tantalum carbide metal gate stacks for nMOSFET application

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14 Author(s)
Y. T. Hou ; Taiwan Semicond. Manuf. Co., Hsinchu ; F. Y. Yen ; P. F. Hsu ; V. S. Chang
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A systematic study is performed on tantalum carbide (TaC) metal electrode on HfO2 and HfSiON dielectrics using conventional CMOS process. TaC's effective work function (EWF) is estimated to be 4.28 eV on HfO2 using Vfb~EOT methodology, where both interfacial oxide and high-K film thickness are varied and thus charge effect is corrected successfully. Investigation of the EWF dependence on underlying dielectrics reveals that TaC EWF on HfSiON is about 0.17eV higher than that on HfO2. This phenomenon cannot be explained by the usual metal induced gap states (MIGS) theory. In addition, mobility higher than 90% of poly/SiO2 reference and EOT scaling down to 12.5A has been achieved. Reduction of HfO2 thickness is identified as an effective approach to suppress charge trapping in the gate stack. With reduced thickness, threshold voltage stability and electron mobility are significantly improved. All these results prove that TaC/high-K stack is a promising candidate in nMOSFET application

Published in:

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

Date of Conference:

5-5 Dec. 2005