By Topic

Advanced MOSFETs using HfTaON/SiO/sub 2/ gate dielectric and TaN metal gate with excellent performances for low standby power application

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Xiongfei Yu ; Dept. of ECE, Singapore Nat. Univ. ; Chunxiang Zhu ; Mingbin Yu ; M. F. Li
more authors

In this work, a novel HfTaON/SiO2 gate dielectric with metal gate has been investigated for low standby power CMOS application. This gate stack exhibits excellent electrical performances, including low leakage current relative to Hf-silicates, good thermal stability, very low interface state density, superior electron and hole mobilities (100% and 96% of universal curves at 0.8 MV/cm), and excellent BTI characteristic. Therefore, the HfTaON/SiO2 has a potential to replace current SiO2 and SiON as the gate dielectric for advanced low standby power application

Published in:

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

Date of Conference:

5-5 Dec. 2005