By Topic

A thermally-stable sub-0.9nm EOT TaSix/HfSiON gate stack with high electron mobility, suitable for gate-first fabrciation of hp45 LOP devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
S. Inumiya ; Semicond. Leading Edge Technol., Inc., Tsukuba ; Y. Akasaka ; T. Matsuki ; F. Ootsuka
more authors

We have realized a 0.9nm-EOT TaSix/HfSiON gate stack that exhibits the high electron mobility of 264 cm2/Vs @ 0.8MV/cm (86% of thermal SiO2), even after spike annealing at 1000degC. This was achieved by using thermally-stable HfSiON gate dielectrics with plasma nitridation, in which interfacial layer growth due to recoiled oxygen had been successfully suppressed

Published in:

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

Date of Conference:

5-5 Dec. 2005