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A thermally-stable sub-0.9nm EOT TaSix/HfSiON gate stack with high electron mobility, suitable for gate-first fabrciation of hp45 LOP devices

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6 Author(s)
Inumiya, S. ; Semicond. Leading Edge Technol., Inc., Tsukuba ; Akasaka, Y. ; Matsuki, T. ; Ootsuka, F.
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We have realized a 0.9nm-EOT TaSix/HfSiON gate stack that exhibits the high electron mobility of 264 cm2/Vs @ 0.8MV/cm (86% of thermal SiO2), even after spike annealing at 1000degC. This was achieved by using thermally-stable HfSiON gate dielectrics with plasma nitridation, in which interfacial layer growth due to recoiled oxygen had been successfully suppressed

Published in:

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Date of Conference:

5-5 Dec. 2005

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