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Coplanar ferroelectric phase shifter on silicon substrate with TiO2 buffer layer

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6 Author(s)
Ki-Byoung Kim ; RFIC Center, Kwangwoon Univ., Seoul, South Korea ; Tae-Soon Yun ; Kim, Hyun-Suk ; Kim, Il-Doo
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In this paper, a BST coplanar phase shifter with differential phase shift of 98° at 50 V and FoM of 46.7°/dB has been realized. The potential feasibility of integrating BST films into Si substrate as microwave phase shifter and/or coplanar waveguide tunable devices with TiO2 thin film buffer layer has been successfully demonstrated. TiO2 as buffer layer has been successfully grown onto Si substrate by ALD (atomic layer deposition).

Published in:

Microwave Conference, 2005 European  (Volume:1 )

Date of Conference:

4-6 Oct. 2005