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High-power ultralow-chirp 10-Gb/s electroabsorption modulator integrated laser with ultrashort photocarrier lifetime

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7 Author(s)
Miyazaki, Yasunori ; High Frequency & Opt. Device Works, Mitsubishi Electr. Corp., Hyogo, Japan ; Yamatoya, T. ; Matsumoto, K. ; Kuramoto, K.
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A high-power, ultralow-chirp electroabsorption modulator (EAM) integrated with a distributed-feedback laser diode (EML) having ultrashort lifetime of photogenerated holes in the EAM quantum-well (QW) structure is reported for the first time. A shallow QW structure having a small valence band offset to enhance the sweepout of photogenerated holes was employed as EAM absorption layer. The measured hole lifetimes were 7-11 ps, and the measured frequency chirp (α-parameter) was low or negative at low EAM reverse bias voltages even under high optical output power conditions. Successful 10-Gb/s 80-km normal-dispersion single-mode fiber transmission (chromatic dispersion D=1600 ps/nm) and the record average fiber optical output power (Pf) of +5.3 dBm were achieved at 25°C. In addition, semicooled operation of EML at enhanced bit rates has been demonstrated for application in small-form-factor protocol-agnostic optical transceivers. A 10.7-Gb/s 1600-ps/nm transmission was achieved at 45°C and Pf=+3.0 dBm.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:42 ,  Issue: 4 )