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Low-noise pHEMT amplifier operating at extra-low supply voltage and power

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2 Author(s)
Korolev, A.M. ; Inst. of Radio Astron., NAS, Kharkov, Ukraine ; Shulga, V.M.

In this paper, a low-noise pHEMT amplifier with an extra-low supply (0.25 V, 2 mA) is presented. The two-stage amplifier, based on low-cost commercially available components, has a noise figure of about 1 dB and gain of 20 ± 1 dB over the 1.5 to 2.5 GHz. The input/output return loss do not exceed -5/- 8 dB, thermal gain variation is of 0.05 dB/°C. Via comparison with state of-the-art low-power low-noise amplifiers, it is confirmed that pHEMT has a grate potential as active element for extra-low DC-power-consumption microwave amplifiers.

Published in:

Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings  (Volume:2 )

Date of Conference:

4-7 Dec. 2005