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A 1.8-2.3GHz wideband and compact power amplifier module using AlGaN/GaN HEMTs

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8 Author(s)
H. Sano ; Eudyna Devices Inc., Kanagawa, Japan ; K. Otobe ; Y. Tateno ; N. Adachi
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We have developed a wideband and compact power amplifier module (PA-module) for a driver stage amplifier of a base station transmitter system using AlGaN/GaN high electron mobility transistors (HEMTs), a nonhermetic package, clip leads, and a printed circuit board (PCB). Linear gain of 30dB, gain flatness of less than 0.5dBp-p, and saturation output power of more than 40dBm were achieved from 1.8GHz to 2.3GHz, operating at drain bias voltage (Vds) of 50V and gate bias voltage (Vgs) of -3V. We demonstrated an adjacent channel leakage power ratio (ACLR) of -50dBc at average output power of 19dBm in practical 2-carrier W-CDMA signals, dissipating 13W. This PA-module covered wide frequency band and its package volume was only 2cm3. It could be compactly incorporated into various base station transmitter systems without difficulty.

Published in:

2005 Asia-Pacific Microwave Conference Proceedings  (Volume:2 )

Date of Conference:

4-7 Dec. 2005