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Three-dimensional (3-D) integrated circuits (ICs), with multiple stacked device layers, offer a unique design opportunity to use both bulk and partially depleted (PD) silicon-on-insulator (SOI) CMOS devices in a single circuit design. Such 3-D designs can, for example, minimize the body effect common in bulk designs and reduce adverse floating-body effects (FBE) common in PD SOI designs. Sequential 3-D technology such as exfoliation-based single-crystal silicon layer transfer allows a low-temperature approach to 3-D integration with high-density interconnectivity. Using the characteristics of this technology, we present the mixed SOI bulk (MSB) design approach that effectively re-maps conventional VLSI designs to the 3-D design space. Tradeoffs in delay, noise margin, power, and circuit footprint are analyzed and demonstrated through analyzes of static, dynamic, pass-transistor, and SRAM circuits.