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Transmission through the band-gap states in Schottky-barrier carbon nanotube transistors

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3 Author(s)
Tongsheng Xia ; Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA ; Register, L.F. ; Banerjee, S.K.

We have studied the minimum off-state leakage current of ultrascaled Schottky-barrier carbon nanotube transistors (SBCNTs) with midgap Schottky-barrier source/drain contacts. The off-state leakage current is separated into two parts: thermal emission around the top of the Schottky barrier and tunneling through the evanescent band-gap states. Because the transmission through deep band-gap states makes a dominant contribution for ultrascaled SBCNTs, the off-state minimum leakage current increases exponentially with decreasing scaling length of SBCNTs.

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Nanotechnology, IEEE Transactions on  (Volume:5 ,  Issue: 2 )