Referenced Items are not available for this document.
We have studied the minimum off-state leakage current of ultrascaled Schottky-barrier carbon nanotube transistors (SBCNTs) with midgap Schottky-barrier source/drain contacts. The off-state leakage current is separated into two parts: thermal emission around the top of the Schottky barrier and tunneling through the evanescent band-gap states. Because the transmission through deep band-gap states makes a dominant contribution for ultrascaled SBCNTs, the off-state minimum leakage current increases exponentially with decreasing scaling length of SBCNTs.
Published in:
Nanotechnology, IEEE Transactions on
(Volume:5
,
Issue:
2
)
Date of Publication: March 2006
- Page(s):
- 80 - 83
- ISSN :
- 1536-125X
- INSPEC Accession Number:
- 8944973
- Digital Object Identifier :
- 10.1109/TNANO.2006.869693
- Date of Current Version :
- 13 March 2006
- Issue Date :
- March 2006
- Sponsored by :
- IEEE Nanotechnology Council
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