By Topic

Strained ultrahigh performance fully depleted nMOSFETs with ft of 330 GHz and sub-30-nm gate lengths

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
D. V. Singh ; IBM T. J. Watson Res. Center, IBM Semicond. R&D Center, Yorktown Heights, NY, USA ; K. A. Jenkins ; J. Sleight ; Z. Ren
more authors

Ultrahigh performance fully depleted nMOSFETs have been fabricated on ultra-thin silicon-on-insulator (UTSOI) with a body thickness of 18 nm and channel lengths down to 20 nm. Uniaxial tensile stress induced in the channel using stressed contact liners and stress memorization was found to significantly improve ac performance, resulting in cutoff frequencies ft as high as 330 GHz. This is the highest fT value reported on fully depleted UTSOI MOSFETs and is among the highest fT values for any Si-based field-effect transistor. Stress memorization and stressed contact liners were found to have little impact on gate to source capacitance indicating that the enhancement in fT results primarily from stress-induced enhancements in transconductance.

Published in:

IEEE Electron Device Letters  (Volume:27 ,  Issue: 3 )