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Yb-doped Ni FUSI for the n-MOSFETs gate electrode application

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10 Author(s)
Chen, J.D. ; Dept. of Electr. & Electron. Eng., Nat. Univ. of Singapore, Singapore ; Yu, H.Y. ; Li, M.-F. ; Kwong, D.L.
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In this letter, an n-type near-band edge fully silicided (FUSI) material-Yb-doped Ni FUSI is demonstrated for the first time. By doping Yb into Ni FUSI, it is shown that while maintaining the same equivalent oxide thickness and the similar device reliability, the work function of Ni FUSI (on SiON dielectrics) could be tuned from 4.72 to 4.22 eV. Yb-doped Ni FUSI is promising for the gate electrode application in n-MOSFETs.

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 3 )