Notification:
We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

Yb-doped Ni FUSI for the n-MOSFETs gate electrode application

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Chen, J.D. ; Dept. of Electr. & Electron. Eng., Nat. Univ. of Singapore, Singapore ; Yu, H.Y. ; Li, M.-F. ; Kwong, D.L.
more authors

In this letter, an n-type near-band edge fully silicided (FUSI) material-Yb-doped Ni FUSI is demonstrated for the first time. By doping Yb into Ni FUSI, it is shown that while maintaining the same equivalent oxide thickness and the similar device reliability, the work function of Ni FUSI (on SiON dielectrics) could be tuned from 4.72 to 4.22 eV. Yb-doped Ni FUSI is promising for the gate electrode application in n-MOSFETs.

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 3 )