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Charge trapping and degradation of HfO2/SiO2 MOS gate stacks observed with enhanced CAFM

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4 Author(s)
Aguilera, L. ; Dept. de Enginyeria Electron., Univ. Autonoma de Barcelona, Bellaterra, Spain ; Porti, M. ; Nafria, M. ; Aymerich, X.

In this letter, a prototype of conductive atomic force microscope with enhanced electrical performance has been used to separately investigate the effect of the electrical stress on the SiO2 and the HfO2 layers of a high-κ gate stack. Charge trapping in HfO2 native defects and degradation of both layers have been observed, depending on the stress level.

Published in:

Electron Device Letters, IEEE  (Volume:27 ,  Issue: 3 )