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GaSb-based tapered diode lasers at 1.93 μm with 1.5-W nearly diffraction-limited power

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7 Author(s)
Pfahler, C. ; Fraunhofer-Inst. fuer Angewandte Festkoerperphys., Freiburg, Germany ; Kaufel, G. ; Kelemen, M.T. ; Mikulla, M.
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High-power high-brightness 1.93-μm wavelength (AlGaIn)(AsSb) tapered diode lasers with a narrow vertical waveguide design are reported for the first time. A nearly diffraction-limited continuous-wave output power of 1.5 W together with a remarkable low fast axis divergence of 43/spl deg/ full-width at half-maximum have been demonstrated. The maximum brightness amounts to 32 MW/cm2sr.

Published in:

Photonics Technology Letters, IEEE  (Volume:18 ,  Issue: 6 )