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Issues in high-frequency noise characterization and modeling of MOSFETs

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1 Author(s)
Chih-Hung Chen ; Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada

This paper provides an overview on the major issues in the high-frequency noise characterization of deep submicron MOSFETs for RF IC applications. It includes the HF noise parameter measurements, test structure design, parameter de-embedding, noise source extraction, physics-based noise models and noise sources implementations.

Published in:

2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks

Date of Conference:

30 Nov.-2 Dec. 2005