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Using boron cluster ion implantation to fabricate ultra-shallow junctions

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1 Author(s)
D. Jacobson ; Semequip Inc., Massachusetts, USA

B18Hx+ and B ion implantation have been used to fabricate the SDE of pMOSFETs with gate lengths of ∼60 nm. Ultra high resolution mass spectra of natural abundance B18H22 and mass 11 isotopically enriched B18H22 have been used to achieve deconvolution of the binominal distribution from ion states present in the cluster ion beam. The cluster source has been specifically designed to maintain the integrity of the cluster during the ionization process. The results of B18Hx+ and B are compared from the viewpoint of transistor performance. The implants were performed at equivalent process energies and doses. It has been shown that B implantation greatly increases the throughput of low energy boron implants while delivering uncompromised device performance.

Published in:

Extended Abstracts of the Fifth International Workshop on Junction Technology

Date of Conference:

7-8 June 2005