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On the temperature and carrier density dependence of electron saturation velocity in an AlGaN/GaN HEMT

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4 Author(s)
Oxley, C.H. ; De Montfort Univ., Leicester, UK ; Uren, M.J. ; Coates, A. ; Hayes, D.G.

The temperature and carrier density dependence of electron intrinsic saturation velocity (vsi) in a 0.3-μm gate length AlGaN/GaN HEMT was extracted from multibias S-parameter measurements. It was found that vsi fell rapidly with increasing sheet carrier concentration (ns), but was only a very weak function of ambient temperature (Tamb). This behavior is consistent with the hot-phonon model of carrier transport.

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Electron Devices, IEEE Transactions on  (Volume:53 ,  Issue: 3 )