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15-nm base type-II InP/GaAsSb/InP DHBTs with FT=384 GHz and a 6-V BVCEO

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3 Author(s)
H. G. Liu ; the Dept. of Physic, Simon Fraser Univ., Burnaby, BC, Canada ; S. P. Watkins ; C. R. Bolognesi

Type-II InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) with a 15-nm base were fabricated by contact lithography: 0.73×11 μm2 emitter devices feature fT=384GHz (fMAX=262GHz) and BVCEO=6V. This is the highest fT ever reported for InP/GaAsSb DHBTs, and an "all-technology" record fT×BVCEO product of 2304 GHz·V. This result is credited to the favorable scaling of InP/GaAsSb/InP DHBT breakdown voltages (BVCEO) in thin collector structures.

Published in:

IEEE Transactions on Electron Devices  (Volume:53 ,  Issue: 3 )