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In this paper, we perform fullband Monte Carlo simulations of nanoscale strained Ge bulk pMOSFETs with compressive strain in the strained Ge layer. We consider transport in the presence of phonon, ionized impurity, surface roughness scattering and impact ionization. Quantum confinement in the inversion layer is taken into account in the form of a modified potential. Strained Gedevices gave higher drive current when compared with unstrained Ge devices for the device structures studied.