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Level shifter embedded in drive circuits with amorphous silicon TFTs

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4 Author(s)
Byung Seong Bae ; Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea ; Jae Won Choi ; Oh, Jae Hwan ; Jin Jang

A drive circuit embedded with a level shifter was fabricated with conventional a-Si:H thin-film transistor (TFT) process. Two cascaded bootstrapped inverters were fabricated for the level shifter. The proposed level shifter shifts an input signal to a high voltage, for example, from 5 to 30 V. The level shifter embedded driver with a-Si:H TFT operates well for the input 5-V start pulse and clocks, and the 4th output of the driver shows 30.3-V output. The level shifter is stable under operation even though there is a threshold voltage shift of a-Si:H TFT. The stability of the driver was also investigated.

Published in:

Electron Devices, IEEE Transactions on  (Volume:53 ,  Issue: 3 )