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A low-noise, wideband, integrated CMOS transimpedance preamplifier for photodiode applications

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4 Author(s)
Binkley, D.M. ; CTI PET Systems, Inc., Knoxville, TN, USA ; Rochelle, J.M. ; Paulus, M.J. ; Casey, M.E.

A low-noise, wideband, integrated CMOS transimpedance preamplifier is presented for silicon avalanche photodiode (APD) applications. The preamplifier, fabricated in a standard 2-μm CMOS technology, features a transimpedance gain of 45 kΩ, a risetime of 22 ns, a series noise of 1.6 nV/Hz1/2, and a wideband equivalent input-noise current of 12 nA for a source capacitance of 12 pF. The measured 22 Na timing resolution of 9.2-ns FWHM and energy resolution of 22.4% FWHM for the RCA C30994 bismuth germanate (BGO)/APD detector module coupled to the preamplifier was comparable to the performance reported using charge-sensitive preamplifiers. This illustrates that transimpedance preamplifiers should be considered for APD applications, especially where APD noise current dominates noise from feedback resistors in the 10-kΩ to 50-kΩ range

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Nuclear Science, IEEE Transactions on  (Volume:39 ,  Issue: 4 )