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Fast neutron radiation effects in silicon detectors fabricated by different thermal oxidation processes

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2 Author(s)
Z. Li ; Brookhaven Nat. Lab., Upton, NY, USA ; H. W. Kraner

High resistivity silicon detectors along with MOS capacitors made on five silicon dioxides with different thermal conditions (975°C to 1200°C) have been exposed to fast neutron irradiation up to the fluence of a few times 1014 n/cm2. New measurement techniques such as capacitance-voltage of MOS capacitors and current-voltage and back-to-back diodes (p+-n--p + if n- is not inverted to p) or resistors (p+-p-p+ if inverted) have been introduced in this study in monitoring the possible type-inversion (n→p) under high neutron fluence. No type-inversion in the material underneath SiO2 and the p+ contact has been observed for detectors made on the five oxides up to the neutron fluence of a few times 1013 n/cm2. However, it has been found that detectors made on higher temperature oxides (⩾1100°C) exhibited less leakage current increase at high neutron fluence

Published in:

IEEE Transactions on Nuclear Science  (Volume:39 ,  Issue: 4 )