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Browse Journals & Magazines > Nuclear Science, IEEE Transac ...> Volume:39 Issue:4 Help

Application of the rapid thermal process: sintering the sputtered aluminum/silicon contact in silicon detector fabrication

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3 Author(s)
Wei Chen ; Brookhaven Nat. Lab., Upton, NY, USA ; Zheng Li ; Kraner, H.W.

Rapid thermal process (RTP) sintering of aluminum metallization has been used in p+-n junction detector fabrication. For the same thickness of aluminum film and at the same RTP sintering condition, the leakage current of the p+-n junction detectors with sputtered Al metallization showed at least a 50% improvement after sintering, and no spiking phenomena were observed compared to the detectors with evaporated Al contacts. RTP sintering in 4% H2/N2 ambient passivates the defects introduced by sputtering and the damage caused by the 60Co irradiation

Published in:
Nuclear Science, IEEE Transactions on  (Volume:39 ,  Issue: 4 )

Date of Publication: Aug 1992

Page(s):
558 - 562
ISSN :
0018-9499
INSPEC Accession Number:
4306122
Digital Object Identifier :
10.1109/23.159665
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Aug 1992
Sponsored by :
IEEE Nuclear and Plasma Sciences Society

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