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Process Integration, Characterization, Modeling and Reliability of a 10K Poly Resistor for Low Power Mixed Signal VLSI Applications

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2 Author(s)
Anser, M. ; AMI Semicond., Pocatello, ID ; Prasad, J.

Many IC applications employ both analog and digital circuits, and therefore it is desirable to integrate both analog and digital functions on the same chip (mixed signal chip). A mixed signal chip uses logic gates to perform digital signal processing while the analog cells allow the chip to interface with the analog environment. These analog cells include I/O blocks containing resistors, capacitors, reference voltage sources and comparators. Integration of all these digital and analog components on a single chip offers high packing density and low power CMOS at a lower cost. Most commonly used materials for high R value resistors are nichrome, tantalum and cermet (Cr-SiO). Extra manufacturing steps involved in depositing and patterning of these films is expensive and therefore new and innovative process for high R value resistors is needed. The authors have integrated very reliable high R value poly silicon thin film resistors at the cost of one extra masking step in a CMOS process. The authors present the results on matching, flicker noise performance and reliability of poly silicon thin film 10K resistors. Also a comparison is performed with thin film HIPO (IK) resistor

Published in:

Semiconductor Device Research Symposium, 2005 International

Date of Conference:

7-9 Dec. 2005