By Topic

Comparative study on effective electron mobility in FinFETs with a (111) channel surface fabricated by wet and dry etching processes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Liu, Y.X. ; Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan ; Sugimata, E. ; Masahara, M. ; Ishii, K.
more authors

The quantitative comparison of the electron mobility (ueff) in the poly-Si gated n-channel multi-FinFETs fabricated by the orientation-dependent wet etching and conventional RIB processes has been carried out. A remarkable increment in ueff has experimentally been confirmed in the Si-fin channels fabricated by the wet etching instead of the RIB. Therefore, it is concluded that the developed wet etching technique is very attractive for the fabrication process of the high quality and ultra-thin Si-fin channel FinFETs.

Published in:

Microprocesses and Nanotechnology Conference, 2005 International

Date of Conference:

25-28 Oct. 2005