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The quantitative comparison of the electron mobility (ueff) in the poly-Si gated n-channel multi-FinFETs fabricated by the orientation-dependent wet etching and conventional RIB processes has been carried out. A remarkable increment in ueff has experimentally been confirmed in the Si-fin channels fabricated by the wet etching instead of the RIB. Therefore, it is concluded that the developed wet etching technique is very attractive for the fabrication process of the high quality and ultra-thin Si-fin channel FinFETs.
Date of Conference: 25-28 Oct. 2005