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Fabrication of three-dimensional HSQ resist structure using electron beam lithography

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3 Author(s)
Y. Matsubara ; Dept. of Appl. Electron., Tokyo Univ. of Sci., Chiba, Japan ; J. Taniguchi ; I. Miyamoto

Electron beam lithography (EBL) is very important for semiconductor manufacturing process, especially for making photo-masks and ASIC devices. EBL is also important for fabricating MEMS, MOES and so on. In this paper, we used hydrogen silsesquioxane (HSQ), which acts as a negative resist (Namatsu, 1998). And we fabricated three-dimensional HSQ resist structure by changing the EB acceleration voltage.

Published in:

Digest of Papers Microprocesses and Nanotechnology 2005

Date of Conference:

25-28 Oct. 2005