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Electron beam lithography (EBL) is very important for semiconductor manufacturing process, especially for making photo-masks and ASIC devices. EBL is also important for fabricating MEMS, MOES and so on. In this paper, we used hydrogen silsesquioxane (HSQ), which acts as a negative resist (Namatsu, 1998). And we fabricated three-dimensional HSQ resist structure by changing the EB acceleration voltage.