By Topic

Analysis and optimization of gate leakage current of power gating circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Hyung-Ock Kim ; Dept. of Electr. Eng., KAIST, Daejeon ; Youngsoo Shin

Power gating is widely accepted as an efficient way to suppress subthreshold leakage current. Yet, it suffers from gate leakage current, which grows very fast with scaling down of gate oxide. We try to understand the sources of leakage current in power gating circuits and show that input MOSFETs plays a crucial role in determining total gate leakage current. It is also shown that the choice of a current switch in terms of polarity, threshold voltage, and size has a significant impact on total leakage current. From the observation of the importance of input MOSFETs, we propose the power optimization of power gating circuits through input control

Published in:

Design Automation, 2006. Asia and South Pacific Conference on

Date of Conference:

24-27 Jan. 2006