Referenced Items are not available for this document.
Amorphous silicon (a-Si:H) thin film transistors (TFTs) are widely used as the active element in large area sensor and display systems. Circuit design with the TFT is constrained by the absence of p-channel devices, and thereby a current source, due to low device mobility. Moreover, the device is also prone to a bias dependent threshold voltage instability. We present a mirrorable current source built with only n-channel devices, which is immune to the variation in threshold voltage, thereby effectively increasing the application spectrum of the TFT
Published in:
Circuits and Systems, 2005. 48th Midwest Symposium on
Date of Conference: 7-10 Aug. 2005
- Page(s):
- 836 - 839 Vol. 1
- Print ISBN:
- 0-7803-9197-7
- INSPEC Accession Number:
- 8956486
- Conference Location :
- Covington, KY
- Digital Object Identifier :
- 10.1109/MWSCAS.2005.1594231
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
