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A novel multiband phase shifter with loss compensation in 180 nm RF CMOS technology

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3 Author(s)
Chao Lu ; Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA ; Anh-Vu Pham ; D. Livezey

We present the design and development of novel integrated multiband phase shifters that have an embedded distributed amplifier for loss compensation in 0.18 mum RF CMOS technology. The phase shifters cover 2.4 GHz to 6 GHz, which includes major bands of 802.16. The phase shifters achieve a measured continuous 180deg phase tuning range at 2.4 GHz and 360deg tuning range for both 3.5 GHz and 5.8 GHz bands. The gain at 2.4 GHz band varies from 0.14 dB to 6.6 dB during phase tuning. The insertion loss is reduced to be from -3.7 dB to 5.4 dB gain and -4.5 dB to 2.1 dB gain in 3.5 GHz and 5.8 GHz bands, respectively. The return loss is less than -10 dB in all conditions. The chip size is 1200 mum times 2300 mum including pads

Published in:

48th Midwest Symposium on Circuits and Systems, 2005.

Date of Conference:

7-10 Aug. 2005