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Room-temperature continuous-wave 1.55 μm GaInNAsSb laser on GaAs

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6 Author(s)
S. R. Bank ; Solid State & Photonics Lab, Stanford Univ., CA, USA ; H. P. Bae ; H. B. Yuen ; M. A. Wistey
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The first low-threshold 1.55 μm lasers grown on GaAs are reported. Lasing at 1.55 μm was observed from a 20×2400 μm as-cleaved device with a room-temperature continuous-wave threshold current density of 579 A/cm2, external efficiency of 41%, and 130 mW peak output power. The pulsed threshold current density was 550 A/cm2 with >600 mW peak output power.

Published in:

Electronics Letters  (Volume:42 ,  Issue: 3 )