By Topic

Systematic and rigorous extraction method of HBT small-signal model parameters

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Degachi, L. ; Electr. Eng. Dept., Ecole Polytechnique de Montreal, Canada ; Ghannouchi, F.M.

This paper presents a systematic and rigorous analytical parameter-extraction method for a heterojunction bipolar transistor (HBT) small-signal equivalent-circuit model. The proposed method relies exclusively on S-parameter measurements. Exact closed-form equations are used for the direct extraction of circuit elements. The method is characterized by its simplicity and ease of implementation. It is applied to predict the small-signal characteristics of transistors from different foundries. Excellent agreement between modeled and measured S-parameters is observed up to 20 GHz.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:54 ,  Issue: 2 )