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Displacement damage correlation of proton and silicon ion radiation in GaAs

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4 Author(s)
Warner, J.H. ; Naval Res. Lab., Washington, DC, USA ; Messenger, S.R. ; Walters, R.J. ; Summers, G.P.

We present results of displacement damage correlation between 2 MeV protons and 22 MeV silicon ion irradiation damage in p+n GaAs solar cells. The radiation induced degradation of the photovoltaic response correlates well in terms of displacement damage dose.

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Nuclear Science, IEEE Transactions on  (Volume:52 ,  Issue: 6 )