This paper provides a methodology for estimating the proton and heavy ion static saturation cross-sections for multi-bit upsets (MBUs) in Xilinx field-programmable gate arrays and describes a methodology for determining MBUs' effects on triple-modular redundancy protected circuits. Experimental results are provided.
Published in:
Nuclear Science, IEEE Transactions on
(Volume:52
,
Issue:
6
)
Date of Publication: Dec. 2005