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Single-event upset in flip-chip SRAM induced by through-wafer, two-photon absorption

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14 Author(s)
McMorrow, D. ; Naval Res. Lab., Washington, DC, USA ; Lotshaw, W.T. ; Melinger, J.S. ; Buchner, S.
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The single-event upset response of a single-event hardened SRAM 10-transistor cell is mapped in two dimensions via carrier injection by two-photon absorption through the back (substrate) surface in a flip-chip mounted 4 Mb SRAM. Using through-wafer carrier injection, charge is deposited into the active regions of the device at well-defined locations in a reproducible manner, and the single-event upset sensitive region of the device is localized to within ±0.3 micrometers.

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Nuclear Science, IEEE Transactions on  (Volume:52 ,  Issue: 6 )