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Radiation-induced edge effects in deep submicron CMOS transistors

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2 Author(s)
Faccio, F. ; Phys. Dept., CERN, Geneva, Switzerland ; Cervelli, G.

The study of the TID response of transistors and isolation test structures in a 130 nm commercial CMOS technology has demonstrated its increased radiation tolerance with respect to older technology nodes. While the thin gate oxide of the transistors is extremely tolerant to dose, charge trapping at the edge of the transistor still leads to leakage currents and, for the narrow channel transistors, to significant threshold voltage shift-an effect that we call Radiation Induced Narrow Channel Effect (RINCE).

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Nuclear Science, IEEE Transactions on  (Volume:52 ,  Issue: 6 )