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Total ionizing dose effects are investigated for the first time in deca-nanometer fully depleted (FD) silicon-on-insulator (SOI) devices. Charge trapping and the influence of device architecture are investigated in transistors with and without external body contacts. A radiation-induced high current regime is measured in floating body devices, both at high and low drain voltages. The mechanism responsible for the onset of this high current regime is investigated by 2D numerical simulations, and shown to result from the combined effect of short gate length and floating body potential in the intrinsic Si film. Transistors with a doped Si film are less sensitive to the high current regime. The use of external body contact in the device architecture completely stops the onset of high current regime, whatever the device gate length.