Referenced Items are not available for this document.
The SEU sensitivity of 0.2 μm fully depleted silicon on ensulator (FD-SOI) devices to proton and neutron irradiations is investigated in a large energy range (14-500 MeV). The comparison to bulk devices with similar gate lengths shows an improvement of a factor of 50 with the presence of body ties. Monte Carlo simulations were performed to confirm that the low sensitivity of FD-SOI is mainly due to the reduced sensitive volume. These results were extrapolated to deca-nanometric technologies to predict the behavior of advanced SOI processes. We found that fully depleted devices will be far less sensitive than partially depleted technologies to the terrestrial radiative environment.
Published in:
Nuclear Science, IEEE Transactions on
(Volume:52
,
Issue:
6
)
Date of Publication: Dec. 2005
- Page(s):
- 2319 - 2325
- ISSN :
- 0018-9499
- INSPEC Accession Number:
- 8767926
- Digital Object Identifier :
- 10.1109/TNS.2005.860722
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 February 2006
- Issue Date :
- Dec. 2005
- Sponsored by :
- IEEE Nuclear and Plasma Sciences Society
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