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Two-dimensional methodology for modeling radiation-induced off-state leakage in CMOS technologies

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3 Author(s)
I. S. Esqueda ; Arizona State Univ., Tempe, AZ, USA ; H. J. Barnaby ; M. L. Alles

A modeling approach using two-dimensional device simulations is presented, which enables the extraction of parameters for the radiation-induced parasitic MOSFET created at the edge of the shallow trench isolation (STI) oxide. With the model, one can estimate drain-to-source off-state leakage current (IOFF) resulting from build-up of oxide trapped charge (NOT). The impact of nonuniform NOT build-up in the STI resulting from total ionizing dose (TID) exposure and external bias conditions is analyzed through volumetric simulations and compared to experimental data. Saturation for the off-state leakage current as a function of trapped charge is also investigated.

Published in:

IEEE Transactions on Nuclear Science  (Volume:52 ,  Issue: 6 )