Scheduled System Maintenance on May 29th, 2015:
IEEE Xplore will be upgraded between 11:00 AM and 10:00 PM EDT. During this time there may be intermittent impact on performance. For technical support, please contact us at We apologize for any inconvenience.
By Topic

Two-dimensional methodology for modeling radiation-induced off-state leakage in CMOS technologies

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Esqueda, I.S. ; Arizona State Univ., Tempe, AZ, USA ; Barnaby, H.J. ; Alles, M.L.

A modeling approach using two-dimensional device simulations is presented, which enables the extraction of parameters for the radiation-induced parasitic MOSFET created at the edge of the shallow trench isolation (STI) oxide. With the model, one can estimate drain-to-source off-state leakage current (IOFF) resulting from build-up of oxide trapped charge (NOT). The impact of nonuniform NOT build-up in the STI resulting from total ionizing dose (TID) exposure and external bias conditions is analyzed through volumetric simulations and compared to experimental data. Saturation for the off-state leakage current as a function of trapped charge is also investigated.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:52 ,  Issue: 6 )