By Topic

Estimation and verification of radiation induced Not and Nit energy distribution using combined bipolar and MOS characterization methods in gated bipolar devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Chen, X.J. ; Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA ; Barnaby, H.J. ; Pease, R.L. ; Schrimpf, R.D.
more authors

Complementary bipolar and MOS characterization techniques, specifically the gate sweep (GS) and sub-threshold sweep (SS), are used to estimate the radiation induced oxide charge (Not) and interface trap (Nit) buildup in gated bipolar test devices. The gate sweep and sub-threshold sweep data from recent TID testing of gated lateral PNP devices suggests an asymmetric energy distribution of interface traps after ionizing radiation exposure. Charge pumping (CP) experiments were done on the test devices to estimate the energy distribution of interface traps induced by radiation. The CP results are used in this paper to confirm the analytical findings from the GS and SS techniques and solidify the use of the complementary method as a simple way of determining radiation induced interface trap distribution in gated bipolar devices.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:52 ,  Issue: 6 )