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The effect of metallization Layers on single event susceptibility

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8 Author(s)
Kobayashi, A.S. ; Vanderbilt Univ., Nashville, TN, USA ; Ball, D.R. ; Warren, K.M. ; Reed, R.A.
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We investigate the effects of metallization layers on the radiation hardness of an epitaxial CMOS memory technology using Monte Carlo simulations. A geometrically and compositionally realistic three-layer metallization scheme is employed in detailed radiation transport simulations that include contributions from discrete δ-rays and nuclear reactions. The presence of high-Z plugs used to connect different metallization layers can have a significant effect on the single-event sensitivity depending on the location of the high-Z material relative to the sensitive region of the underlying device.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:52 ,  Issue: 6 )

Date of Publication:

Dec. 2005

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