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Role of heavy-ion nuclear reactions in determining on-orbit single event error rates

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11 Author(s)
Howe, C.L. ; Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA ; Weller, R.A. ; Reed, R.A. ; Mendenhall, M.H.
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Simulations show that neglecting ion-ion interaction processes (both particles having Z>1) results in an underestimation of the total on-orbit single event upset error rate by more than two orders of magnitude for certain technologies. The inclusion of ion-ion nuclear reactions leads to dramatically different SEU error rates for CMOS devices containing high Z materials compared with direct ionization by the primary ion alone. Device geometry and material composition have a dramatic effect on charge deposition in small sensitive volumes for the spectrum of ion energies found in space, compared with the limited range of energies typical of ground tests.

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Nuclear Science, IEEE Transactions on  (Volume:52 ,  Issue: 6 )